In integrated circuit manufacturing, photolithography or optical lithography refers to the technique of using light to create fine patterns on a substrate (such as a silicon wafer) to protect specific areas of the substrate during subsequent processes such as etching, deposition, or ion implantation. Ultraviolet light is typically used to transfer geometric patterns from an optical mask onto a photosensitive chemical substance (photoresist) coated on the substrate.

Photoresist refers to a thin film material that changes its solubility upon exposure to ultraviolet light, electron beams, ion beams, X-raysetc. In semiconductor manufacturing, photoresist is a core material in the photolithography process reacting with light to create the required precise circuit patterns on the chip material. Currently, KrF, ArF, and EUV photoresists are considered high-end photoresists. PAG (Photoacid Generator) plays a very important role in photoresists. PAGs are mainly divided into two categories: Ionic PAG and Non-Ionic PAG.

This compound (Cas No.1138028-44-0 ) belongs to the No-Ionic PAG with weak acid generation, mainly used in KrF and ArF lithography. the melting point is of 143~145 °C, the appears is yellow to off-yellow powder, and the purity is over 99%.