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Founded in 2007, focus on the synthesis of small molecule compounds and the extraction of some natural compounds. We develop, produce and sell high-quality advanced intermediates and some APIs with competitive prices.
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Product Details

1242906-47-3,2-Propenoic acid, 2-methyl-, 3,5-bis[(2,2,2-trifluoroacetyl)oxy]tricyclo[3.3.1.13,7]dec-1-yl ester

1242906-47-3,2-Propenoic acid, 2-methyl-, 3,5-bis[(2,2,2-trifluoroacetyl)oxy]tricyclo[3.3.1.13,7]dec-1-yl ester | 1242906-47-3

Chemical Name: 2-Propenoic acid, 2-methyl-, 3,5-bis[(2,2,2-trifluoroacetyl)oxy]tricyclo[3.3.1.13,7]dec-1-yl ester

CAS Number: 1242906-47-3
Formula: C18H18F6O6
Molecular weight: 444.32

Product Description

This compound (Cas No. 1242906-47-3) is a specialized monomer designed for incorporation into advanced photoresist formulations.

Key characteristics include:

  • Chemical Nature: Organic monomer suitable for polymerization into high-performance photoresist resins.
  • Photochemical Behavior: Sensitive to deep ultraviolet (DUV) light, particularly at the 193 nm wavelength used in ArF lithography.
  • Solubility: Typically soluble in common organic solvents used in photoresist formulation, enabling uniform coating on silicon wafers.
  • Thermal Stability: Engineered to withstand post-exposure bake (PEB) conditions without premature decomposition.
  • Reactivity: Functions as a crosslinking or polymerizable unit, contributing to the final resist’s resolution, sensitivity, and etch resistance.

Uses

The primary application of the compound (CAS No. 1242906-47-3) is as a monomer in chemically amplified photoresists (CARs) for semiconductor lithography:

  1. ArF DUV Lithography: Enables high-resolution patterning at 193 nm, critical for manufacturing sub-20 nm semiconductor nodes.
  2. Photoresist Resin Synthesis: Used to create polymers that define the mechanical and chemical properties of the resist, including adhesion, film uniformity, and etch resistance.
  3. Microfabrication: Supports production of integrated circuits (ICs), memory devices, and other microelectronic components where precise nanoscale patterning is essential.

Industrial Applications

In semiconductor manufacturing, this compound (CAS No. 1242906-47-3) plays a crucial role in advanced photolithography processes:

  • High-Resolution Chip Fabrication: Its incorporation into photoresists improves critical dimension (CD) control, line-edge roughness, and resolution.
  • DUV Lithography for Logic and Memory Chips: Essential for ArF-based lithography in producing advanced microprocessors, DRAM, and NAND flash memory.
  • Research & Development: Used by photoresist developers and materials scientists to optimize next-generation resist formulations for extreme ultraviolet (EUV) and beyond.

Summary

The compound (Cas No. 1242906-47-3) is a high-performance photoresist monomer tailored for ArF DUV lithography. Its chemical stability, UV sensitivity, and polymerizable structure make it indispensable in advanced semiconductor manufacturing. By enabling fine patterning at the nanoscale, this compound supports the ongoing miniaturization and performance enhancement of electronic devices.